Run
cards of the FlexFET process
Split
point # 1. Thin SOI vs. Thick SOI
Step
3. Thin SOI sacrificial oxidation
Step
4. Wet strip sacrificial oxide
Step
7. Resist strip and clean
Split
point # 2. Implanted S/D vs. Silicided S/D
Step 11. Resist strip and clean
Step 14. Resist strip and clean
Step 16. Implanted S/D activation
Step 17a. Nitride pad deposition onto imp. S/D wafers
Step 17b. Nitride pad deposition onto Silicided wafers
Step 18b. Active are photo on Silicided wafers
Step 19a. Nitride pad etch on imp. S/D wafers
Step 19b. Nitride pad etch on Silicided wafers
Step 20a. Silicon etch on imp. S/D wafers
Step 20b. Ti etch on Silicided S/D wafers
Step 21. RTA silicide reaction on Silicided S/D wafers
Step 22. Resist strip and clean
Step 26. PMOS bottom gate and Vt adjustment implants
Step 27. Wet etch PSG from PMOS region
Step 28. Resist strip and clean
Step 31. BSG spacer deposition
Step 34. NMOS bottom gate and Vt adjustment implant
Step 35. Wet etch BSG from NMOS region
Step 36. Resist strip and clean
Step 37. RTA BSG and NMOS drive out
Step 41. Resist strip and clean
Step 42. Sacrificial oxidation
Step 43. Nitride spacer deposition
Step 45. Sacrificial oxide strip and clean
Step 47a. Poly-Si topgate deposition
Step 47b. TiN+Poly-Si topgate deposition
Step 50. Resist strip and clean
Step 51. TEOS oxide STI deposition
Step 52. STI oxide planarization
Step 53. Gate contact (M0) photo
Step 55. Resist strip and clean
Step 56. M0 deposition (PVD TiN and LPCVD Poly-Si)
Step 57. M0 CMP (Poly and TiN)
Step 66. Resist strip and clean
Last updated: 08/16/2004