Run Card for FlexFET process

 

 

Step 27. Wet etch PSG from PMOS regions

 

 

 

Steps

Notes

Date

Operator

27.1

 

CMOS wafers only.

 

Sink 8, fresh 5/1 BHF

 

Etch rate for PSG:

~ 4200A/min for un-annealed

~ 2700A/min for annealed

 

-          silicided S/D wafers: 10 sec etch time

-          implanted S/D wafers: 20 sec etch time

 

05/05/04

Horvath