Step 15.0 Sputter titanium
|
Steps |
Notes |
Date |
Operator |
|
15.1 |
Silicide wafers only: F#2,
5, 6, 9, 10, 12, 15 + 4 dummies Std. MOS clean wafers in
sink6, 10/1 HF dip. |
12/16/03 |
Horvath |
|
15.2 |
Sputter Ti in Novellus: Recipe: -
Temp. = 300 °C -
Pre-heat time = 60 sec -
Power = 900 W -
Dep. Time = 33 sec |
12/16/03 |
Horvath |