Step 3.0 Grow thick
sacrificial oxide on thin SOI wafers
|
Steps |
Notes |
Date |
Operator |
||||
|
|
|
|
|
||||
|
3.1 |
Standard MOS piranha clean
thin SOI wafers in sink6 + 25/1 HF dip until dewet Include 2 dummies for
oxide thickness measurement |
10/23/03 |
Horvath |
||||
|
3.2 |
2 hrs TLC clean Tystar2 |
10/23/03 |
Horvath |
||||
|
3.3 |
Wet oxidation in Tystar2:
recipe 2WETOXA, 1000°C,
10min. |
10/23/03 |
Horvath |
||||
|
3.4 |
Measure oxide thickness on
dummies using Nanoduv: |
10/23/03 |
Horvath |
||||
|
T |
C |
F |
L |
R |
|||
|
1030 |
1059 |
1067 |
1041 |
1059 |
|||
|
1014 |
1030 |
1043 |
1030 |
1033 |
|||