Step 41. Resist strip and clean
|
Steps |
Notes |
Date |
Operator |
|
41.1 |
Matrix O2 ash on w#2, 9, 13: polymer formation on the resist sidewall during the Si etch. Polymer stays on the wafer even after ash and 10
min piranha clean. Other wafers did not get
O2 ash, but soaked in PRS-3000 for overnight (~15hrs). Polymer also detectable. Polymer removal in
EKC-270: 75C, 30 min on all wafers. Polymer removed from w#2, 9, 13
(previously O2 ashed wafers). Repeat O2 ash + EKC-270
removal process on all the other wafers. Device Si
layer got attacked on w#3, 7, 14. Si is partially or totally gone from these wafers. |
6/1/04 |
Horvath |