Step 48. Top gate photo
Steps |
Notes |
Date |
Operator |
48.1 |
Standard DUV litho without
BARC: ASML: -
FlexFET1 reticle, mask TOPGATE -
Energy-focus
matrix to determine best exposure settings -
Expose Poly
group with 21mJ at 0.5um focus offset (made on 6/15/04) -
Expose TiN+Poly wafers with 20mJ at 0.8um focus offset Hard bake: Oven bake at
120C for 1hr |
06/21/04 |
Horvath |