Step 51. TEOS oxide STI deposition
|
Steps |
Notes |
Date |
Operator |
|
51.1 |
First TEOS deposition and
etch back in P-5000: Target 5500A: -
110 sec
deposition time (dep. rate~80A/sec) -
120 sec etch back
time (etch rate~30A/sec) Thickness on dummies (Nanoduv, program: Oxide on Si) T: 5021A 4896A C:5322A 5130A F: 5370A 5171A L: 5374A 5176A R: 5194A 5003A |
07/01/04 |
Horvath |
|
51.2 |
Second TEOS deposition and
etch back in P-5000: Target 3500A additional
TEOS: -
90 sec
deposition time -
120 sec etch
back time Thickness of this
deposition: T: 3606A C: 3918A F: 3869A L: 3863A R: 3693A Total TEOS thickness (on dummies): T: 8507A 8330A C: 8933A 8740A F: 8927A 8750A L: 9015A 8793A R: 8568A 8453A |
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