Run Card for FlexFET process

 

 

Step 17a Nitride pad deposition onto implanted S/D wafers

 

 

 

Steps

Notes

Date

Operator

17a.1

 

Implanted S/D wafers only:

F# 1, 3, 7, 8, 11, 13, 14.

+ 5 Si dummies

 

Std. MOS clean wafers in piranha in sink6

 

 

12/18/03

Horvath

 

17a.2

 

 

Nitride deposition in Tystar9:

 

Recipe 9SNITA, 43min., 800°C

 

 

12/18/03

Horvath

17a.3

 

Measure the nitride thickness on dummies with Nanoduv :

 

T

C

F

L

R

1863

1803

1875

1876

1858

1849

1781

1812

1852

1827

1807

1730

1769

1782

1769

 

 

Min. dep. rate: 40.2 Å/min

Max. dep. rate: 43.6 Å/min

Avg. dep. rate: 42 Å/min

 

 

12/18/03

Horvath

 

Note: Step 17b is going to be low temperature nitride deposition onto Ti silicide wafers