Step 18a Active are photo on
imp. S/D wafers
|
Steps |
Notes |
Date |
Operator |
|
18a.1 |
Implanted S/D wafers only:
F# 1, 3, 7, 8, 11, 13, 14. Std. litho step with BARC: ASML: Mask: ACTIVE (FlexFET1 reticle). Energy meander test on F#13: 44mJ was the best exposure energy. Exposed all wafers with 44mJ. Develop: 0.35um was open on every wafer. Hard Bake: @ 120°C oven for 30 min. |
12/18/03 |
Horvath |