Run Card for FlexFET process

Step 61. Contact etch

Steps

Notes

Date

Operator

61.1

Etch wafers in Applied Centura.

- 2 steps etch for implanted wafers: MXP_OXSP_ETCH + MXP_NIT_ME (etch through ILD oxide + nitride pad over S/D region)

- 1 step etch for silicided wafers: MXP_OXSP_ETCH (etch through ILD oxide. SEM images indicated that PQECR nitride was seriously damaged/etched previously, no nitride etch necessary)

Etching summary:

Wafer	MXP OXSP ETCH	MXP NIT_ME	Silicon thickness on S/D region	Contact Resistance on test S/D area
F#2	160s	-	-	N+: 1Mohm- open No imp: 13Ohm- 89kOhm
F#3	165+ 15s	30+15+ 15+15+ 20+30s	T=285A C=345A F=202A L=320A R=276A	MOhm range, open circuit everywhere
F#5	160s	-	-	N+: open No imp: 17Ohm- 27Ohm P+: 4Mohm- 14MOhm
F#6	157+ 25s	-	-	N+: 1.2MOhm- open No imp: 8Ohm- 54kOhm P+: 21MOhm- open
F#7	180s	30+30s	T=1291A C=1286A F=1250A L=1330A R=1308A	N+: <=Mohm No imp: ~40Mohm P+: 23-59Mohm
F#9	160s	-	-	P+: 12Ohm- 164Ohm No imp: 8Ohm- 110Ohm P+: 9Ohm- 83Ohm
F#12	160+ 20s	-	-	N+: 56Ohm- 1.8kOhm No imp: 49Ohm- 0.6kOhm P+: 37Ohm- 0.4kOhm
F#13	180s	50+12s	T=1405A C=1440A F=1349A L=1423A R=1389A	N+: 40kOhm- 4.7Mohm No imp: 0.1MOhm- 18MOhm P+: 0.2MOhm- 5.8MOhm
F#14	180s	50s	T=1428A C=1499A F=1402A L=1459A R=1458A	N+: 50kOhm- 500kOhm No imp: 1.2M-5MOhm P+: 50kOhm- 100kOhm

08/5/04

Horvath