Step 8.0 Screen oxidation
|
Steps |
Notes |
Date |
Operator |
||||||||
|
8.1 |
Include implanted S/D
wafers only: F#1, 3, 7, 8, 11, 13, 14. Add 6 test wafers for BARC
etching characterization. |
12/02/03 |
Horvath |
||||||||
|
8.2 |
Standard MOS piranha clean
wafers in sink6. Quick 10/1 HF dip to dewet. |
12/02/03 |
Horvath |
||||||||
|
8.3 |
Dry oxidation in Tystar2.
Target = 100Å Recipe: 2DRYOXA, 900°C, 22 min., 15 min N2 annealing (previous test resulted
115Å in 25 min.) |
12/02/03 |
Horvath |
||||||||
|
8.4 |
Oxide thickness and quality
measurement. Measure oxide thickness
with Rudolph ellipsometer on 2 dummies: |
12/02/03 |
Horvath |
||||||||
|
T |
C |
F |
L |
R |
|||||||
|
98 |
98 |
98 |
98 |
98 |
|||||||
|
100 |
101 |
100 |
100 |
101 |
|||||||
|
Measure oxide quality with
SCA: |
|||||||||||
|
|
Nsc_inv |
Qox_inv |
Dit_inv |
Ts |
|||||||
|
Dummy1 |
3.82E14 |
6.52E10 |
2.63E10 |
295 us |
|||||||
|
Dummy2 |
3.93E14 |
6.94E10 |
1.92E10 |
328 us |
|||||||
|
F#7* |
6.72E14 |
3.85E11 |
1.83E11 |
458 us |
|||||||
|
F#8* |
1.01E15 |
3.91E11 |
1.25E11 |
481 us |
|||||||
*: Not sure if the
measurement is accurate for the SOI wafers.