Run Card for FlexFET process

Step 32. BSG spacer etch

Steps

Notes

Date

Operator

32.1

BSG spacer etch in Applied Centura:

Recipe: MXP_OXSP_ETCH with automatic endpoint detection

Etch times (recipe endpointed at):

F# 3: 17sec+14sec etch (false endpoint first)

F#7, 9: 31sec etch

F#6, 10: 32sec etch

F#5: 33sec etch

05/07/04

Horvath

32.2

Check the Si surface cleanness by measuring

Si device layer thickness on 1511A BOX (Nanospec):

Wafer (SOI type)	Si device layer thickness
F#3 (thin, implanted)	155A
F#5 (thin, silicided)	1100A
F#6 (thin, silicided)	1150A
F#7 (Thick, implanted)	260A
F#9 (Thick, silicided)	1660A
F#10 (Thick, silicided)	1580A

Note: During the oxide spacer etch we lost ~50-100A of device Si layer (selectivity)

05/07/04

Horvath