Step 6.0 Zero layer etch
|
Steps |
Notes |
Date |
Operator |
|
6.1 |
Etchnig through BARC in
Lam2:* Recipe SIO2MON: CF4 = 90 sccm CHF3 = 30 sccm He = 120 sccm Pressure = 2.8 Torr Power = 850 W Time = 15 sec |
11/26/03* |
Horvath |
|
6.2 |
Si etching in Lam4: Recipe 6440: Oxide break through: SF6 = 100 sccm Pressure = 400 mTorr Power = 200 W Time = 4 sec Si etch: Cl2 = 200 sccm He = 440 sccm Pressure = 425 mTorr Power = 330 W Time = 7 sec |
11/26/03 |
Horvath |
*: Previous etching trials
were made on 10/28/03, 10/29/03, 10/30/03,
11/05/03, 11/19/03. These trials were performed without BARC;
only SF6 and
Cl2 chemistry was applied in Lam4. Severe wafer-to-wafer etching
un-uniformities were inspected, the alignment marks were not
acceptable for
ASML.