Step 33. NMOS photo
|
Steps |
Notes |
Date |
Operator |
|
33.1 |
Standard DUV litho with NO
BARC (because of the following wet etch step): ASML: -
FlexFET2 reticle, mask N-SELECT -
80mJ for CMOS silicided S/D wafers (F#5, 6, 9, 10)* -
140mJ for CMOS
implanted S/D wafer F#3 -
120mJ for CMOS
implanted S/D wafer F#7 (still a little over exposed) Hard bake: Oven bake at
120C for 1hr Device Si
thickness could be measured on the open areas of the wafers, ensuring the
removal of the photoresist from the NMOS windows. *: Machine constant had to
be modified to accept the alignment of F#10. |
05/07, 10/04 |
Horvath |