Step 52. STI oxide planarization
|
Steps |
Notes |
Date |
Operator |
|
52.1 |
a) DUV-210 resist spin on
wafers: -
HMDS -
500 RPM for 20
sec -
1480 RPM for
10 sec -
30 min rest to
“reflow” resist -
Soft bake
130C, 60 sec (default) Resist thickness: T 11207A C 11098A F 11172A L 11167A R 11136A b) Etch back with Centura MXP_PRETCHBACK recipe: -
300 sec etch
time Etch rate is approx. 2500
A/min for both resist and TEOS. Remaining TEOS thickness on
dummies (same initial thickness as product wafers) T: 6189A 5949A C: 6948A 6646A F: 6452A 6091A L: 6745A 6365A R: 6373A 6127A => Approx. 2000-2500A
TEOS was etched underneath the resist |
07/09/04 |
Horvath |