Run Card for FlexFET process

 

 

Step 17b Nitride pad deposition onto Silicided wafers

 

 

 

Steps

Notes

Date

Operator

17b.1

 

Silicided wafers only:

F# 2, 5, 6, 9, 10, 12, 15.

+ 5 Si dummies

 

Std. MOS clean wafers in piranha in sink6

 

 

02/20/04

Horvath

 

17b.2

 

 

PQECR nitride deposition:

 

Room temp., 30mTorr, 265sec dep. time

 

 

02/23/04

Horvath

17b.3

 

Measure the nitride thickness on dummies with Nanoduv  (R.I.=1.712):

 

T

C

F

L

R

1863

2143

1966

1887

1939

2034

2234

2148

1915

1886

 

 

 

02/23/04

Horvath

 

Note: High density point defects on the surface of w#15