Step 63. Aluminum deposition
|
Steps |
Notes |
Date |
Operator |
|
63.1 |
Pre-deposition clean: -
Silicided wafers: Novellus sputter etch (ETCH_STD recipe, 1min etch time) -
Implanted
wafers: 25/1 HF dip for 30sec in Sink6. Al deposition in CPA: 6mTorr, 4kW, 80cm/min
(~850A/pass) -
Silicided wafers: 6
passes (~5200A, Rs=1.6Ohm/sq) -
Implanted
wafers: 7 passes (~6000A, Rs=1.1Ohm/sq) |
08/10/04 |
Horvath |