Step 35. Wet etch BSG from NMOS regions
|
Steps |
Notes |
Date |
Operator |
|
35.1 |
CMOS wafers only. 1. Sink 8, fresh 5/1 BHF Etch rate for BSG: ~ 2700A/min for
un-annealed ~ 1500A/min for annealed -
implanted S/D
wafers: 30 sec etch time 2. Sink 9, fresh 10/1 BHF* Etch rate for BSG: ~1400A/min for un-annealed -
silicided S/D wafers: 30
sec etch time *: 10/1 BHF was used to
remove BSG from the silicided wafers to decrease PQECR
nitride damage |
05/18/04 |
Horvath |