Step 39. Bottom gate photo
|
Steps |
Notes |
Date |
Operator |
|
39.1 |
Clean wafers: -
Implanted
wafers: 5 min piranha + rinse -
Silicided wafers: rinse
only |
05/27/04 |
Horvath |
|
39.2 |
Standard DUV litho with
BARC: ASML: -
FlexFET1 reticle, mask BOTGATE -
Energy-focus
matrix to determine best exposure settings -
Expose all the
wafers with 22mJ (0.35um open) Hard bake: Oven bake at
120C for 1hr |
05/27/04 |
Horvath |