Step 9.0 NMOS photo
|
Steps |
Notes |
Date |
Operator |
|
9.1 |
Wafers: CMOS implanted S/D
wafers only: F#1, 3, 7, 8. Standard DUV litho step
with BARC coating Exposure energy 45 mJ/cm2,
FlexFET2 reticle, mask N SELECT. Wafers are a little
over-exposed (however 0.5um is OK) Hard bake in oven 120°C for 30 min. |
12/03/03 |
Horvath |
|
9.2 |
BARC removal from exposed
areas: Lam4: recipe 6003 (new
setup) 2-step recipe: 1.) Main etch Press: 425 mTorr RF power: 300 W Gap: 1.2 cm O2: 15 sccm CHF3: 90 sccm He: 200 sccm 2.) Secondary etch/Residue
removal Press: 425 mTorr RF power: 200W Gap: 1.2 cm O2: 50 sccm Etching time: 40 sec (1st
part) + 8 sec (2nd part) 100 A SiO2 left on a dummy;
assuming the same results on work wafers |
12/05/03 |
Horvath/ Parsa |