Step 49. Top gate etch
|
Steps |
Notes |
Date |
Operator |
|
49.1 |
Poly top gate etch (w#5,
7, 9, 12, 13) a) Centura
DPS_SI_ETCH recipe: -
Chamber clean
with SF6 recipe -
All wafers
were etched for 11 sec (endpoint showed up at 10 sec) b) Plasma ash photoresist in Technics-C for 7
min. c)100/1 HF dip for 1 min.
to remove possible resist polymer
|
06/21/04 |
Horvath |
|
49.2 |
TiN + Poly top gate etch (w#2, 3, 6, 10, 14) a) Centura
DPS_SI_ETCH recipe: -
w#2: 15 sec
etch -
w#3: 20 sec
etch -
w#6: 13 sec
etch -
w#10: 20 sec
etch -
w#14: 20 sec
etch Note:
longer etch times to ensure Poly-Si overetch. Etch rate of TiN is
very slow with this recipe. b) TiN
main wet etch: -
NH4OH : H2O2 =
1 : 1 -
Wafer by wafer
etch for 9 min. -
Rinse,
blow-dry c) Possible resist polymer
removal: -
25/1 HF dip
for 30 sec -
Rinse, spin-dry d) Resist removal: -
Matrix O2
plasma ash, 1.5 min e) TiN
wet overetch (to remove remaining small TiN residues): -
Piranha dip
for 30 sec in Sink7. -
Rinse,
spin-dry |
6/29/04 |
Horvath |