Step 18b Active are photo on
Silicided wafers
|
Steps |
Notes |
Date |
Operator |
|
18b.1 |
Silicided wafers only: F# 2, 5, 6, 9, 10, 12, 15. Std. litho step with BARC: ASML: Mask: ACTIVE (FlexFET1 reticle). Energy meander test : 110mJ was the best exposure energy. Exposed all the wafers with 110mJ. Develop: 0.35um was open on every wafer. Hard Bake: @ 120°C oven for 1 hour. |
03/01/04 |
Horvath |