NanoLab is equipped with 18 Tystar furnaces. Standard atmospheric and low pressure thin film processes are available. Examples of such processes are: dry and wet oxidation, low pressure chemical vapor deposition (LPCVD), dopant diffusion, annealing, and sintering applications. Most furnace processes are available from 100mm to 150mm diameter wafers, with some custom accommodations for small substrates or pieces. The newest generation of furnaces are capable of 200 mm diameter processing. We also offer a range of rapid thermal annealing systems and ovens for diverse thermal processing needs.
Equipment Manual
5. Thermal Processing
Furnaces
5.1 (tystar1) Tystar1 MOS Gate Oxidation Atmospheric
5.2 (tystar2) Tystar2 MOS Dry/Wet Oxidation & Anneal Atmospheric
5.3 (tystar3) Tystar3 NON-MOS Dry/Wet Oxidation & Anneal Atmospheric
5.4 (tystar4) Tystar4 Atmospheric Dry/Wet Oxidation (NON-MOS)
5.5 (tystar5) Tystar 200mm Wet/Dry Oxidation
5.6 (tystar6) Tystar 200mm N-Type Doping
5.7 (tystar7) Tystar 200mm P-Type Doping
5.10 (tystar10) Tystar10 MOS Clean Polycrystalline Silicon LPCVD
5.11 (tystar11) Tystar11 MOS Clean LTO LPCVD
5.12 (tystar12) Tystar12 Non-MOS Clean LTO LPCVD
5.14 (tystar14) Tystar14 MOS 200mm LPCVD Nitride and HTO
5.15 (tystar15) Tystar15 200mm Non-MOS Poly-Si LPCVD
5.16 (tystar16) Tystar16 Non-MOS 200mm LTO LPCVD
5.17 (tystar17) Tystar17 Non-MOS Low Stress Nitride & High Temp. Oxide LPCVD
5.18 (tystar18) Tystar18 MOS Clean Aluminum Sintering Atmospheric
5.19 (tystar19) Tystar19 MOS Clean Si-Ge LPCVD
5.20 (tystar20) Tystar20 Non-MOS Clean Si-Ge LPCVD
5.22 (vcselox) AET GaAs/AlGaAs Oxidation Furnace
Rapid Thermal Annealers
5.30 RTP Overview
5.31 (rtp1) AccuThermo AW610 RTP for III/V or PZT
5.32 (rtp2) AccuThermo AW610 RTP III/V -no metal
5.33 (rtp3) AccuThermo AW610 RTP Si Non-MOS
5.34 (rtp4) AccuThermo AW610 RTP Si MOS Clean
5.35 (rtp8) AccuThermo AW810 RTP Si MOS Clean
Ovens
5.36 (vacoven) YES Vacuum Oven
5.37 (vacoven2) Small Vacuum Oven for Polymer Curing
5.38 (vacoven3) Small Vacuum Oven for Low Temperature Anneal
Process Manual
5. Thermal Processing
5.2 (tystar15) aSi LPCVD comparison Tystar10 and Tystar15
5.3 (tystar6) Tystar 6 N-Doping Characterization Summary
5.4 (tystar7) Tystar 7 P-Doping Characterization Summary
Process Specifications
5. Thermal Processing
5.1 (tystar1) 1GATEOXA - Gate Oxide
5.2 (tystar2) 2WETOXA - Wet Oxide
5.3 (tystar3) 3GATEOXA - Gate Oxide
5.4 (tystar5) 5WETOXA.005 - Wet Thermal Oxide
5.5 (tystar6) 6PHOSDOP1.006 - Phosphorus Doping and Diffusion Report
5.6 (tystar9) 9LSNVARN - Low Stress Nitride
5.7 (tystar9) 9CH6SiA - Silicon Carbide
5.8 (tystar10) 10SDPLYC- Doped Polysilicon
5.9 (tystar10) 10SUPLYB - Undoped Polysilicon
5.10 (tystar11) 11SDLTON - Doped Low Temperature Oxide
5.11 (tystar11) 11SULTON - Undoped LTO
5.12 (tystar12) 12SDLTOP - Doped Low Temperature Oxide
5.13 (tystar12) 12SULTON - Undoped Low Temperature Oxide
5.14.1 (tystar14) 14SIN - Stoichiometric SiN
5.14.2 (tystar14) 14LSN - Low Stress Nitride
5.14.3 (tystar14) 14HTO - High Temperature Oxide
5.15.1 (tystar15) 15POLY.002 - Undoped PolySi
5.15.2 (tystar15) 15NDPOLYVAR.002 - Doped PolySi Standard
5.16 (tystar16_150mm) 16LTO - Undoped LTO
5.17 (tystar17) 17HTOSTDA - High Temperature Oxide
5.18 (tystar17) 17LSNSTDA - Low Stress Nitride
5.19 (tystar17) 17STDNITA - Standard Nitride
5.20 (tystar20) SIGENUCJ.020
Rapid Thermal Processing
5.21 (rtp3) RTP3-Dry Oxidation Monitor
5.22 (rtp4) RTP4-Dry Oxidation Monitor
5.23 (rtp8) RTP-8 Dry Oxidation Monitor