1. General Information
2. Cleaning Procedures
3. Mask Making
4. Photolithography
4.10 (ksaligner) Lamp Intensity (i-line & g-line)
4.11 (ksaligner) MiR 701 Exposure Dose (1.0um & 2.0um)
4.12 (ksaligner) MiR 900 Exposure Dose (3.5um & 5.0um)
4.20 (svgcoat3) AR3-600 (BARC) (0.06 um)
4.30 (mla150) MiR 701 Exposure Dose and Focus (1.0um)
5. Thermal Processing
5.1 (tystar1) 1GATEOXA - Gate Oxide
5.2 (tystar2) 2WETOXA - Wet Oxide
5.3 (tystar3) 3GATEOXA - Gate Oxide
5.4 (tystar5) 5WETOXA.005 - Wet Thermal Oxide
5.5 (tystar6) 6PHOSDOP1.006 - Phosphorus Doping and Diffusion Report
5.7 (tystar9) 9CH6SiA - Silicon Carbide
5.8 (tystar10) 10SDPLYA- Doped Polysilicon
5.9 (tystar10) 10SUPLYA - Undoped Polysilicon
5.10 (tystar11) 11SDLTON - Doped Low Temperature Oxide
5.11 (tystar11) 11SULTON - Undoped LTO
5.12 (tystar12) 12SDLTOP - Doped Low Temperature Oxide
5.13 (tystar12) 12SULTON - Undoped Low Temperature Oxide
5.14.1 (tystar14) 14SIN - Stoichiometric SiN
5.14.2 (tystar14) 14LSN - Low Stress Nitride
5.14.3 (tystar14) 14HTO - High Temperature Oxide
5.15.1 (tystar15) 15POLY.002 - Undoped PolySi
5.15.2 (tystar15) 15NDPOLYVAR.002 - Doped PolySi Standard
5.16 (tystar16_150mm) 16LTO - Undoped LTO
5.17 (tystar17) 17HTOSTDA - High Temperature Oxide
5.18 (tystar17) 17LSNSTDA - Low Stress Nitride
5.19 (tystar17) 17STDNITA - Standard Nitride
Rapid Thermal Processing
5.20 (rtp3) RTP3-Dry Oxidation Monitor
5.21 (rtp4) RTP4-Dry Oxidation Monitor
5.22 (rtp8) RTP-8 Dry Oxidation Monitor
6. Thin Film Systems
6.1 (amst) FOTS standard Molecular Vapor Deposition
6.4 (mrc944) MRC944 Al/Si Deposition
6.22 (parylene) Parylene C Standard Deposition
6.24 (picosun) Picosun Al2O3 Deposition
6.25 (cambridge) Cambridge Fiji Al2O3 Deposition
6.51 (aln2) Aln2 PM1 Molybdenum Sputter Deposition
6.52 (aln2) Aln2 PM2 AlN Sputter Deposition
6.53 (aln2) Aln2 PM3 Aluminum Sputter Deposition
6.60 (oxfordpecvd3) Oxford PECVD3 - SiOx
6.61 (oxfordpecvd4) Oxford PECVD4 - SiOx
6.62 (oxfordpecvd4) Oxford PECVD4 - SixNy
6.63 (pqecr) PQECR- Oxide
7. Etching Systems
7.0 (technics-c) Archived Etch Process Specifications
7.12 (primaxx) Primaxx Vapor HF Etch on Wet Thermal Oxide
7.34 (lam6) Lam6 Oxide Etch
7.35 (centura-mxp) Centura-MXP Oxide Etch
7.41 (lam7) Lam7 Aluminum Etch
7.42 (lam8) Lam8 Polysilicon Main Etch
7.44 (sts-oxide) STS-Oxide Plasma Etch Monitor
7.46 (centura-met) Centura-MET Aluminum Etch
7.51 (ionmill6) Ionmill6 Etch Monitor
8. Testing & Inspection Equipment
8.3.1 (cde-resmap) CDE ResMap 4.42 Ohm-cm Resistivity
8.3.2 (cde-resmap) CDE ResMap 0.0380 Ohm-cm Resistivity
8.5.1 (sca) SCA 2.87E14 cm-3 Nsc
8.11.1 (park-afm) Park AFM Noise Floor Measurement
8.20.1 (ellips) Ellips 1054 A SiO2 Thin Film
8.20.2 (ellips) Ellips 4455 A Si3N4 Thin Film
8.23.1 (nanoduv) Nanoduv 1054 A SiO2 Thin Film
8.23.2 (nanoduv) Nanoduv 4455 A Si3N4 Thin Film
8.24.1 (nanospec) Nanospec 1054 A SiO2 Thin Film
8.24.2 (nanospec) Nanospec 4455 A Si3N4 Thin Film
8.60.1 (keyence) Keyence 20 um Pitch (500x)
8.60.2 (keyence) Keyence 5 um Pitch (1000x)
8.63.1 (olympus) Olympus 1.8 um Step
8.63.2 (olympus) Olympus 12 um Pitch
9. Packaging
10. Planarization