We offer a comprehensive suite of dry-etching capabilities to meet diverse fabrication requirements. Our multiple, segregated process chambers mitigate the risk of device contamination, contributing to enhanced process stability across user applications and sustained performance over time.
Equipment Manual
7. Etching Systems
7.1 (etchclass) Plasma Etch Training Class
Vapor Etch
7.11 (xetch) Xenon Difluoride Etching System
7.12 (primaxx) uEtch HF Vapor Release System
Plasma Etch
7.21 (technics-c) Technics C Plasma Etching System
7.22 (yes-g500) YES-G500 Plasma Cleaning System
7.23 (centura-stri) Centura Microwave Plasma Asher
Reactive Ion Etch
7.31 (ptherm) Plasma-Therm Parallel Plate Etcher
7.32 (matrix-etch) Matrix Silicon Oxide/Nitride Etcher
7.33 (semi) SEMI RIE System
7.35 (centura-mxp) MxP+ Etch Chamber B
7.36 (oxford-rie) Oxford RIE System
Inductively Coupled Plasma with Bias
7.41 (lam7) Lam7 Metal (Al) TCP Etcher
7.42 (lam8) Lam8 Poly-Si TCP Etcher
7.44 (sts-oxide) STS Advanced Planar Source Oxide Etch System
7.45 (centura-3-5) Compound Etch Chamber A
7.46 (centura-met) Metal Etch Chamber C
7.47 (oxford-icp) Oxford Plasmalab 100 ICP (Compound III-V)
Ion Mill
7.51 (ionmill6) Pi Scientific 6-inch Ion Beam Mill
Process Manual
7. Etching Systems
Process Specifications
7. Etching Systems
7.0 (technics-c) Archived Etch Process Specifications
7.12 (primaxx) Primaxx Vapor HF Etch on Wet Thermal Oxide
7.34 (lam6) Lam6 Oxide Etch
7.35 (centura-mxp) Centura-MXP Oxide Etch
7.41 (lam7) Lam7 Aluminum Etch
7.42 (lam8) Lam8 Polysilicon Main Etch
7.44 (sts-oxide) STS-Oxide Plasma Etch Monitor
7.46 (centura-met) Centura-MET Aluminum Etch
7.51 (ionmill6) Ionmill6 Etch Monitor