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Short loop #2a:
PSG drive out test short loop (quick check) |
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Step |
Process name |
Specification/Measurement results |
Equipment |
Comment |
Operator/Date |
0.0 |
Wafer |
P-type, prime
grade, 38-63 Ohm-cm |
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4 wafers |
horvath/09-18-03 |
1.0 |
Bulk resistivity
measurement |
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horvath/09-18-03 |
1.1 |
Pre-clean |
Piranha clean and
HF dip wafers |
Sink9 |
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1.2 |
Measure sheet resistance |
w#1: ~600 700 550
800 750 Ohm/sq |
4ptprb |
Approximate
values (high resistivity) |
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w#2: ~1070 1000 1540 710 900 |
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w#3:~ 500 570 570 570 390 |
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w#4: ~470 600 700 600 500 |
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2.0 |
PSG deposition |
Recipe: 11SDLTOA,
12 min. dep. Time |
Tystar11 |
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horvath/09-18-03 |
2.1 |
Measure PSG thickness |
w#1: 1764 1688
1672 1696 1675 A |
Nanoduv |
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w#2: 1772 1677 1667 1687 1670 |
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w#3: 1762 1664 1663 1678 1656 |
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w#4: 1756 1600 1658 1675 1657 |
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3.0 |
Backside PSG etch |
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Necessary for accurate temperature set up during RTA |
horvath/09-18-03 |
3.1 |
Wafer coating |
Coat wafers with
PR on front |
SVGCOAT6 |
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3.2 |
Hard bake |
Hard bake resist |
UVBAKE |
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3.3 |
PSG etch |
5/1 BHF dip
wafers |
Sink7 |
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3.4 |
Resist strip |
Ash resist in O2
plasma |
Matrix |
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3.5 |
Cleaning |
Std. Piranha
clean MEMS and MOS clean |
Sink9 |
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4.0 |
RTA |
w#1 950C 10 sec |
Heatpulse3 |
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horvath/09-19-03 |
w#2 950C 20 sec |
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w#3 950C 30 sec |
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w#4 950C 50 sec |
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5.0 |
Bulk resistivity
measurement |
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horvath/09-19-03 |
5.1 |
PSG etch |
Dip wafers into
25/1 HF |
Sink9 |
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5.2 |
Measure sheet resistance |
w#1 685 760 617
820 750 Ohm/sq |
4ptprb |
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w#2 510 460 435 488 480 |
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w#3 400 397 340 410 370 |
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w#4 340 340 320 340 320 |
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