| Short loop #2a: PSG drive out test short loop (quick check) | |||||
| Step | Process name | Specification/Measurement results | Equipment | Comment | Operator/Date |
| 0.0 | Wafer | P-type, prime grade, 38-63 Ohm-cm | 4 wafers | horvath/09-18-03 | |
| 1.0 | Bulk resistivity measurement | horvath/09-18-03 | |||
| 1.1 | Pre-clean | Piranha clean and HF dip wafers | Sink9 | ||
| 1.2 | Measure sheet resistance | w#1: ~600 700 550 800 750 Ohm/sq | 4ptprb | Approximate values (high resistivity) | |
| w#2: ~1070 1000 1540 710 900 | |||||
| w#3:~ 500 570 570 570 390 | |||||
| w#4: ~470 600 700 600 500 | |||||
| 2.0 | PSG deposition | Recipe: 11SDLTOA, 12 min. dep. Time | Tystar11 | horvath/09-18-03 | |
| 2.1 | Measure PSG thickness | w#1: 1764 1688 1672 1696 1675 A | Nanoduv | ||
| w#2: 1772 1677 1667 1687 1670 | |||||
| w#3: 1762 1664 1663 1678 1656 | |||||
| w#4: 1756 1600 1658 1675 1657 | |||||
| 3.0 | Backside PSG etch | Necessary for accurate temperature set up during RTA | horvath/09-18-03 | ||
| 3.1 | Wafer coating | Coat wafers with PR on front | SVGCOAT6 | ||
| 3.2 | Hard bake | Hard bake resist | UVBAKE | ||
| 3.3 | PSG etch | 5/1 BHF dip wafers | Sink7 | ||
| 3.4 | Resist strip | Ash resist in O2 plasma | Matrix | ||
| 3.5 | Cleaning | Std. Piranha clean MEMS and MOS clean | Sink9 | ||
| 4.0 | RTA | w#1 950C 10 sec | Heatpulse3 | horvath/09-19-03 | |
| w#2 950C 20 sec | |||||
| w#3 950C 30 sec | |||||
| w#4 950C 50 sec | |||||
| 5.0 | Bulk resistivity measurement | horvath/09-19-03 | |||
| 5.1 | PSG etch | Dip wafers into 25/1 HF | Sink9 | ||
| 5.2 | Measure sheet resistance | w#1 685 760 617 820 750 Ohm/sq | 4ptprb | ||
| w#2 510 460 435 488 480 | |||||
| w#3 400 397 340 410 370 | |||||
| w#4 340 340 320 340 320 | |||||