Short loop #1: Nitride selectivity at the Si etch (bottom gate) step38
Step	Process name	Specification/Measurement results	Equipment	Comment	Operator/Date
0.0	Wafer	N-type, test grade, 5-10 Ohm-cm, Epi wafers		6 wafers	horvath/09-19-03
1.0	Nitride deposition				horvath/09-19-03
1.1	Pre-clean	Piranha clean and HF dip wafers	Sink9
1.2	Nitride deposition	recipe STDNIT.017, 45 min. dep. Time	Tystar17	Tystar9 was down
1.3	Measure nitride thickness	w#1: 1370 1336 1315 1328 1334	Nanoduv
		w#2: 1392 1374 1369 1366 1382
		w#3: 1423 1399 1396 1393 1411
		w#4: 1433 1414 1413 1405 1423
2.0	Poly deposition	Recipe: 10SDPLYA, 23 min. dep. Time	Tystar10	on top of the nitride on 2 wafers; target 500A	horvath/09-22-03
2.1	Measure Poly thickness	w#1: 443 418 423 420 432	Nanospec, prog.89: poly on 1350A nitride
		w#2: 447 435 445 439 430
3.0	Etching characterization				horvath/09-24-03 to 10/17/03
3.1	Add 2 silicon wafer and 1 TiSi2 wafer to the group	w#1, w#2: nitride+poly
		w#3, w#4: nitride
		w#5, w#6: Si
		w#7: ~1000A TiSi2
3.2	Pattern wafers with baseline poly mask	Std. DUV litho, 19mJ energy, UVBAKE hard bake	ASML
3.3	Etching	Recipe 6444, using HBr, Cl2, O2 mixture	Lam4
3.4	Remove PR		Matrix
4.0	Determine etch rate	Si etch rate: 2000-3000 A/min	ASIQ, Nanoduv		horvath/10-17-03
		Si3N4 etch rate: 70-90 A/min
		TiSi2 etch rate: 70-150 A/min
		Si : Si3N4 : TiSi2 = 30 : 1 : 1.5