Split Table for UCB FlexFET Lot | |||||||||||
CMOS Wafers | NMOS Wafers | ||||||||||
Implanted S/D | Silicide S/D | Implanted S/D | Silicide S/D | ||||||||
S/D Thick | Poly Gate | TiN Gate | Poly Gate | TiN Gate | Poly Gate | TiN Gate | Poly Gate | TiN Gate | |||
1425 | x | 3 | 5 | 6 | x | x | 12 | x | |||
1875 | 7* | x | 9 | 10 | 13 | 14 | x | 2 | |||
NOTE: All Implants with NO TILT | |||||||||||
Wafer | NMOS /CMOS | IMPLANTED/SILICIDE S/D | N+ POLY /TiN TOPGATE | S/D Thick | Chan Thick | PMOS BottGate Implant #1 Phosphorus | PMOS BottGate Implant #2 Antimony | PMOS Threshold Implant BF2 | NMOS BottGate Implant #1 Boron | NMOS BottGate Implant #2 Indium | NMOS Threshold Implant |
2 | NMOS | SILICIDE | TiN | 1850 | 1850 | N/A | N/A | N/A | 5e13, 40keV | 1e14, 195keV | As, 5e12, 16keV |
3 | CMOS | IMPLANTED | TiN | 1450 | 204 | 5e13, 100keV | 1e14, 195keV | 5e12, 16keV | 5e13, 40keV | 1e14, 195keV | As, 5e12, 16keV |
5 | CMOS | SILICIDE | N+ POLY | 1415 | 1415 | 5e13, 100keV | 1e14, 195keV | 1e13, 16keV | 5e13, 40keV | 1e14, 195keV | BF2, 5e12, 16keV |
6 | CMOS | SILICIDE | TiN | 1435 | 1435 | 5e13, 100keV | 1e14, 195keV | 5e12, 16keV | 5e13, 40keV | 1e14, 195keV | As, 5e12, 16keV |
7 | CMOS | IMPLANTED | Poly* | 1890 | 314 | 5e13, 100keV | 1e14, 195keV | 5e12, 16keV | 5e13, 40keV | 1e14, 195keV | As, 5e12, 16keV |
9 | CMOS | SILICIDE | N+ POLY | 1855 | 1855 | 5e13, 100keV | 1e14, 195keV | 1e13, 16keV | 5e13, 40keV | 1e14, 195keV | BF2, 5e12, 16keV |
10 | CMOS | SILICIDE | TiN | 1725 | 1725 | 5e13, 100keV | 1e14, 195keV | 5e12, 16keV | 5e13, 40keV | 1e14, 195keV | As, 5e12, 16keV |
12 | NMOS | SILICIDE | N+ POLY | 1420 | 1420 | N/A | N/A | N/A | 5e13, 40keV | 1e14, 195keV | BF2, 5e12, 16keV |
13 | NMOS | IMPLANTED | N+ POLY | 1895 | 372 | N/A | N/A | N/A | 5e13, 40keV | 1e14, 195keV | BF2, 5e12, 16keV |
14 | NMOS | IMPLANTED | TiN | 1865 | 366 | N/A | N/A | N/A | 5e13, 40keV | 1e14, 195keV | As, 5e12, 16keV |
* Split str |