Step 8. Pad oxidation/Nitride deposition

Step

Process

Date

Operator

8.1

TLC clean Tystar2 for 2 hours overnight

08/19/03

Horvath

8.2

Std. clean wafers in Sink9 MEMS&MOS side, dip into 25/1 HF until dewet.

Include NCH, PCH and 2 dummies.

8.3

Dry oxidation in Tystar2:

2DRYOXA, 1000C, 21 min.; 15 min N2 anneal

Oxide thickness on PCH, NCH:

Wafer	T	C	F	L	R
PCH	271	273	279	275	272
NCH	273	276	280	277	273

8.4

Nitride deposition in Tystar9 (target=1800A)

9SNITA, 65min, 800C

Include 2 dummies.

Nitride thickness:

Wafer	T	C	F	L	R
W#1	2466	2405	2469	2486	2436
W#5	2416	2316	2360	2397	2384
W#10	2355	2459	2550	2526	2545

Note: Thicker nitride than the target is even better to block following implant.