Step 51.
Dielectric deposition and planarization
|
Step |
Process |
Date |
Operator |
|
51.1 |
Undoped TEOS deposition in P-5000. Target = 2um Oxide thickness on wafers before deposition (LOCOS+PSG): w#4: 7862 7453 7751 7563 7753 A w#9: 7862 7459 7587 7466 7701 A AH-USG recipe, 250sec. deposition time Oxide thickness after deposition: w#4: can't measure, bad film quality w#9: 28747 28390 28341 28660 28497 A |
03/21/05 |
Horvath |
51.2 |
CMP target: 1um removal CMP recipe: 6IN.OXIDE, time: 2x225sec (7.5min) Oxide thickness after CMP: w#4: smashed in the CMP machine w#9: 18096 17223 13172 17455 14350 A |
03/21/05
|
Horvath
|