Step 5. Nitride etch

 

 

 

 

Step

 

Process

Date

Operator

 

5.1

 

 

Nitride etch in Lam4, recipe 200.

 

Measure etch rate: 1240A/min

 

Etch w#1 for 113 sec

Etch w#2-7 for 115 sec

Etch w#8-10 for 115 sec

 

08/08/03

Horvath

 

5.2

 

 

Measure pad oxide thickness after etch:

 

wafer

T

C

F

1

138

198

141

2

165

206

160

3

157

210

173

4

153

204

157

5

163

222

174

6

188

243

201

7

202

249

215

8

157

227

180

9

180

240

187

10

166

243

204

 

Hard bake in oven for 70min @ 120C.

 

Measure PR thickness on dummy:

T= 5992A

C= 5954A

F= 6065A

 

 

08/08/03

Horvath