Step 46. Al
deposition (Metal 1)
Step |
Process |
Date |
Operator |
46.1 |
|
11/22-24/04 |
Horvath |
46.2 |
Piranha clean wafers in sink8 (MEMS) and sink6 (MOS) NOTE: Some kind of native oxide removal is necessary! Keep in mind, that HF dip damages silicide. Options: - mild HF dip (25/1 or 100/1 for 1 min) - sputter etch in Novellus (concerns of junction leakage!) |
||
46.3 |
w#1, 2, 3, 4, 7, 8, 9 6Mtorr, 4kW, 22.5cm/min (~3000A/pass) Rs=0.15 Ohm/sq |