Step 46. Al deposition (Metal 1)

 

 

 

 

Step

 

Process

Date

Operator

 

46.1

 

 

Remove PR in Matrix

 

11/22-24/04

Horvath

 

46.2

 


Piranha clean wafers in sink8 (MEMS) and sink6 (MOS)

NOTE: Some kind of native oxide removal is necessary!
Keep in mind, that HF dip damages silicide.
Options:
- mild HF dip (25/1 or 100/1 for 1 min)
- sputter etch in Novellus (concerns of junction leakage!)

 

46.3

 

 

Al deposition in CPA (Novellus is down):
w#1, 2, 3, 4, 7, 8, 9
6Mtorr, 4kW, 22.5cm/min (~3000A/pass)

Rs=0.15 Ohm/sq