Step 42. Silicidation

Step	Process	Date	Operator
42.1	Sputter etch in Novellus (recipe ETCHSTD, 1 min)	11/17-18/04	Horvath
42.2	Ti deposition in Novellus (recipe TI3000STD, 25 sec dep. time). Ti film: Rs=14 Ohm/sq
42.3	RTA annealing in Heatpulse3. Silicide chamber. Recipe: 650RTA6.RCP 450C 20 sec 650C 15 sec N2 atmosphere
42.4	Etch untreacted Ti and TiN in piranha. Sink7, 45 min etch, 120C Check R using manual probe: field oxide area : MOhm range or infinity. S/D and poly area: 15-50 Ohm Rs = 12 Ohm/sq (on silicide test wafer)