Step 3. Pad oxidation/Nitride deposition

 

 

 

 

Step

 

Process

Date

Operator

 

3.1

 

 

TLC clean Tystar2 for 2 hours overnight

 

08/04/03

Horvath

 

3.2

 

 

Std. clean wafers in Sink9 MEMS&MOS side, dip into 25/1 HF until dewet.

Include NCH, PCH.

 

 

3.3

 

Dry oxidation in Tystar2:

2DRYOXA, 1000C, 21 min.; 15 min N2 anneal

 

3.4

 

 

Nitride deposition in Tystar9 (target=1800A)

9SNITA, 65min, 800C

 

Nitride thickness:

 

Wafer

T

C

F

L

R

W#1

2308

2234

2292

2302

2276

W#5

2310

2238

2288

2304

2271

W#10

2431

2391

2475

2457

2430

 

Note1: Tystar9 was down right after oxidation; nitride dep. was done on 8/7/03.

 

Note2: Thicker nitride than the target is even better to block following implant.