Step 28. Gate
photo
Step |
Process |
Date |
Operator |
28.1 |
Energy-Focus matrix: 21mJ, -0.2um were found the best. Expose every wafer under these conditions. Mask: POLY. Hard bake: UVBAKE pr.U (20sec @ 110C, 20sec ramp up to 140C, 30sec @ 140C with UV light HIGH) Note: BARC coating partially resolved during the developing process (long expired BARC), leaving un-uniform surface (micron scaled BARC islands) on the developed area. |
10/08/04 |
Horvath |