Step 22. Screen oxidation

Step

Process

Date

Operator

22.1

TLC clean Tystar2 for 2 hours overnight

09/08/04

Horvath

22.2

Std. clean wafers in Sink6 MOS side, 25/1 HF dip until NCH, PCH dewet (1.5 min)

Include NCH, PCH.

22.3

Dry oxidation in Tystar2:

2DRYOXA, 900C, 40 min.; 15 min N2 anneal

Oxide thickness (Nanoduv pr.7):

Wafer	T	C	F	L	R
W#3	175	183	181	189	180
PCH	183	175	187	196	182

Rudolph ellipsometer: 150 A oxide on PCH