Step 21. Sacrificial oxidation

Step

Process

Date

Operator

21.1

TLC clean Tystar2 for 2 hours overnight

09/01/04

Horvath

21.2

Std. clean wafers in Sink6 MOS side, 10 sec dip into 25/1 HF.

Include NCH, PCH.

21.3

Dry oxidation in Tystar2:

2DRYOXA, 900C, 40 min.; 1 sec (=NO) N2 anneal

Oxide thickness (Nanoduv pr.7):

Wafer	T	C	F	L	R
W#4	165	172	168	162	147
NCH	169	175	167	175	171