Step 2. Zero layer photo

Step	Process	Date	Operator
2.1	Std. DUV litho. ASML: zero layer mask, 30mJ UVBAKE, pr.J	07/03/03	Horvath
2.2	Etch PM marks into Si: a) Initial oxide etch in Lam2: 7+12sec (~100A oxide was etched) b) Si etch in Lam4: recipe 6440 (RF power was modified at the oxide break through step from original to 125W). Etch times: 2sec (oxide break through) + 9 sec Si etch
2.3	PM depth measurement (ASIQ): W#1: 3480A W#2: 1880A W#3: 2000A W#4: 1380A W#5: 1380A W#6: 1380A W#7: 1380A W#8: 1350A W#9: 1350A W#10: 1350A