Step 19. LOCOS oxidation
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Step |
Process |
Date |
Operator |
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19.1 |
TLC clean Tystar2 for 2 hours overnight |
08/26/04 |
Horvath |
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19.2 |
Remove resist in Matrix. Std. clean wafers in Sink8 MEMS & Sink6 MOS side, dip into 25/1 HF for 10 sec. Include NCH, PCH. |
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19.3 |
Wet oxidation in Tystar2: 2WETOXA, 1000C, 120 min.; 20 min N2 anneal Include NCH, PCH. Oxide thickness on NCH:
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