Step 16. Nitride etch

 

 

 

 

Step

 

Process

Date

Operator

 

16.1

 

 

Nitride etch in Lam4, recipe 200.

 

Measure etch rate: 1344A/min average

 

Etch w#1-8 for 100 sec

Etch w#9-10 for 103 sec

 

Endpoint signal was traced on Channel C and manual endpoint was applied after 3-4 sec. of over etch .

 

09/17/03

Horvath

 

16.2

 

 

Measure pad oxide thickness after etch:

 

wafer

T

C

1

217

277

2

189

226

3

176

208

4

194

224

5

194

226

6

196

222

7

189

219

8

185

229

9

177

230

10

185

231

 

Measure step height with ASIQ:

 

W#1: 7510A (center) = 2000A nitride + 5500A PR

W#2: 7340A (center) = 2050A nitride + 5300A PR

 

 

09/17/03

Horvath