Step 14. Pad oxidation/Nitride deposition

Step

Process

Date

Operator

14.1

TLC clean Tystar2 for 2 hours overnight

09/08/03

Horvath

14.2

Std. clean wafers in Sink9 MEMS&MOS side, dip into 25/1 HF until dewet.

Include NCH, PCH and 2 dummies.

14.3

Dry oxidation in Tystar2:

2DRYOXA, 1000C, 21 min.; 15 min N2 anneal

Oxide thickness on NCH:

Wafer	T	C	F	L	R
NCH	277	284	288	282	285

14.4

Nitride deposition in Tystar9 (target=1800A)

9SNITA, 55min, 800C

Include PCH and 2 dummies.

Nitride thickness:

Wafer	T	C	F	L	R
W#1	2031	1986	2010	2026	2018
W#5	1991	1936	1957	1981	1960
W#8	2050	1991	2036	2041	1996
W#10	2085	2057	2119	2113	2094