Step 13. Well drive-in

 

 

 

 

Step

 

Process

Date

Operator

 

13.1

 

 

TLC clean Tystar2.

 

09/04/03

Horvath

 

13.2

 

 

Std. clean wafers in Sink9 MEMS&MOS piranha. Dip into 25/1 HF until dewet.

Include PCH, NCH.

 

 

13.3

 

 

Well drive-in in Tystar2:

2WELLDR, 1100C, 150 min dry O2, 15 min N2 annealing.

 

Measure oxide thickness:

 

Wafer

T

C

F

L

R

W#1

2149

2152

2160

2148

2169

W#10

2203

2216

2243

2206

2243

 

 

Measure Rs on PCH, NCH:

 

PCH: 760-780 Ohm/sq

NCH: 700-716 Ohm/sq