Step 10. Nitride etch

Step

Process

Date

Operator

10.1

Nitride etch in Lam4, recipe 200.

Measure etch rate: 1240A/min average

Etch time was calculated based on the lowest etch rate and the thickest nitride film

Etch w#1-7 for 123 sec

Etch w#8-10 for 126 sec

Note: The etch can be controlled by tracing the endpoint signal on Channel C (Trend-row data ch. C). Over etch 3-4 sec.

08/27/03

Horvath

10.2

Measure pad oxide thickness after etch:

wafer	T	C
1	170	236
2	160	222
3	156	206
4	175	216
5	172	214
6	193	227
7	191	226
8	189	228
9	189	239
10	209	259

Hard bake in oven for 30min more @ 120C.

08/27/03

Horvath