Run Card for cmos150

 

 

step 9.0

 

 

 

 

 

 

Process: Well Drive-in

 

Date

Operator

 

 

 

 

 

1.

TCA clean furnace tube (tystar17).

 

09/06/01

vorosl

 

TCA clean overnight: 4 hours (TCACLEAN.017)

 

 

 

 

TCA clean run failed 2 times. After 1100 C the temperature controller stopped.

 

 

 

 

 

 

 

 

 

TCA clean was fine.

 

09/11/01

vorosl

 

 

 

 

 

2.

Standard clean wafers in Sink9 (MEMS then MOS side). Control wafers are involved

(NCH, PCH).

 

09/12/01

vorosl

 

 

 

 

 

3.

Well drive-in at 1120 C in Tystar17:

recipe: WELLDR.017

60 min. temperature ramp from 750 C to 1120 C 240 min. dry O2

300 min. N2               

 

09/12/01

vorosl

 

Note: WELLDR.017 recipe developed by Sia Parsa.

 

 

 

 

During the oxidation step 105. the temperature dropped down to 1000 C. It happend in the first 20 min., 15 min. later reached the desired 1120 C.

 

 

 

 

 

 

 

 

4.

Measure oxide thickness on two control

wafers. PCH, NCH  Tox [A]=

 

09/13/01

vorosl

 

Use nanospec, oxide program, 10x lens

 

 

 

 

wafer

top

center

flat

left

right

 PCH

5792

5863

5775

5809

5750

 NCH

3005

3008

3002

3005

3001

 

 

 

 

 

 

 

 

5.

Strip oxide in 5:1 BHF.

 

09/13/01

vorosl

 

Measure sheet resistance (Rs) on NCH and PCH.

 

 

 

 

Note: Could not get I=0.453 mA.

 

 

 

 

Rs (NCH)= 451 ohm/sq.

Rs(PCH)= 1460 ohm/sq.

 

U[mV]

12

14

11

16

12.1

I[mA]

0.12

0.14

0.11

0.164

0.12

Rs

453

453

453

441.9512

456.775

 

 

 

 

 

 

U[mV]

82

83

65

84.4

88

I[mA]

0.255

0.258

0.2

0.264

0.272

Rs

1456.706

1457.326

1472.25

1448.227

1465.588