Run Card for cmos150

Step 7.0

Process: Nitride Removal, include NCH

Date

Operator

1.

Dip in 25:1 HF for 2 min. to remove thin oxide

on top of Si₃N₄ (sink9)

28/08/01

vorosl

2.

Etch nitride off in boiling phosphoric acid.

28/08/01

vorosl

Temperature= 130 C

Etch time= 3 hours

Note: Since 6” sink was not available for this process old lab (sink432b) was utilized.

3.

Measure Tox in n-well on work wafers.

28/08/01

vorosl

Nanospec, thin oxide program, 10x

wafer	top	cent	flat	left	right
#1	291	289	292	294	285
#2	299	299	293	300	296
#3	296	297	293	293	289
#4	297	295	296	292	294
#5	273	274	266	273	270
#6	270	266	265	268	266
#7	276	284	270	282	270
#8	271	278	268	271	268
#9	265	266	276	265	266
#10	266	267	263	257	258
#12	269	273	273	272	271
#13	274	268	260	261	258
#14	285	284	286	290	293
#15	296	293	296	292	294
NCN	298	299	296	307	293