Run Card for cmos150

 

 

Step 7.0

 

 

 

 

 

 

Process: Nitride Removal, include NCH

 

Date

Operator

 

 

 

 

 

1.

Dip in 25:1 HF for 2 min. to remove thin oxide

on top of Si3N4 (sink9)

 

28/08/01

vorosl

 

 

 

 

2.

Etch nitride off in boiling phosphoric acid.

 

28/08/01

vorosl

 

Temperature= 130 C

 

 

 

 

Etch time= 3 hours

 

 

 

 

 

 

 

 

 

Note: Since 6 sink was not available for this process old lab (sink432b) was utilized.

 

 

 

 

 

 

 

 

3.

Measure Tox in n-well on work wafers.

 

28/08/01

vorosl

 

Nanospec, thin oxide program, 10x

 

 

 

 

 

 

 

 

 

wafer

top

cent

flat

left

right

#1

291

289

292

294

285

#2

299

299

293

300

296

#3

296

297

293

293

289

#4

297

295

296

292

294

#5

273

274

266

273

270

#6

270

266

265

268

266

#7

276

284

270

282

270

#8

271

278

268

271

268

#9

265

266

276

265

266

#10

266

267

263

257

258

#12

269

273

273

272

271

#13

274

268

260

261

258

#14

285

284

286

290

293

#15

296

293

296

292

294

NCN

298

299

296

307

293