Run Card for cmos150

 

 

step 6.0

 

 

 

 

 

 

Process: N-well Cover Oxidation

 

Date

Operator

 

 

 

 

 

1.

TCA clean furnace tube (tystar17).

 

23/08/01

vorosl

 

 

 

 

 

 

TCA clean overnight: 4 hours (TCACLEAN.017)

 

 

 

 

 

 

 

 

2.

Remove PR in O2 plasma (matrix) and clean wafers in sink9 (MEMS side).

 

24/08/01

vorosl

 

 

 

 

 

3.

Standard clean wafers in Sink9 (MOS side). Control wafers are involved (NCH, PCH).

10 min. piranha,

rinse, 1 min 25/1 HF dip

rinse, spin-dry)

 

24/08/01

vorosl

 

 

 

 

 

3.

Well cover oxidation at 950 C (WETOX.017) in Tystar17:

10 min. dry O2

175 min. wet O2

10 min. dry O2

20 min. N2               

 

24/08/01

vorosl

 

 

 

 

 

4.

Oxide thickness on PCH, Tox [A]= 

 

27/08/01

vorosl

 

Use nanospec, oxide program, 10x lens

 

 

 

 

wafer

top

center

flat

left

right

PCH

4782

4907

4833

4825

4870

#1

4739

4727

4729

4727

4732

#5

4866

4866

4839

4805

4804

#9

4867

4910

4859

4838

4836

#15

4872

4893

4841

4818

4832

 

 

 

 

 

 

 

 

 

Note:

 

 

 

 

The whole process takes for ~6 hours.

(1 hour ramp up, 1:30 ramp down)