Run Card for cmos150

 

Step 40.0

 

 

 

 

 

Process: Metal Photo: Mask METAL1-CM

(M1 chrome-clear field)

Date

Operator

 

 

 

 

 

Standard Lithography Process

May 2, 2002

vorosl

 

 

 

1.

HMDS

 

 

 

Program: 1 on svgcoat6

 

 

 

 

 

 

2.

Spin and Soft Bake

 

 

 

Program: 1 and 1 on svgcoat6

 

 

 

Photoresist: UV210-0.6 (Shipley)

 

 

 

Thickness of PR: 7000 A (RPM=2000)

 

 

 

 

 

 

3.

Expose by ASML: METAL1 mask

 

 

 

Run Focus-Energy matrix. best die: 17 mJ/cm2

Mask window size increased to 39 mm in X and Y.

 

Note: Without ARC (anti reflective coat) really difficult to manage the printing of the long narrow lines. Lifting.

 

 

 

4.

Post exposure bake (Program: 1)

 

 

 

 

 

 

5.

Develop (Program: 1)

 

 

 

svgdev6

 

 

6.

Inspect

 

 

 

 

 

 

7.

Descum

 

 

 

This step was skipped since there was no 6 tool for it

 

 

 

 

 

 

8.

Hard Bake

 

 

 

UVBAKE: program J