Run Card for cmos150

Step 4.0

Process: Plasma Etch Nitride in lam4

Date

Operator

1.

Plasma Etch Nitride in lam4

13/08/01

vorosl

Actual Etch time = 50 second

Specifications:

Recipe name: 200 Power: 125 W

Step	1	2	3	4	5
Press	0	200	200	500	0
RF Top	0	0	125	0	0
RF Bot	0	0	0	0	0
Gap	0.9	0.9	0.9	0.9	5.53
O2	0	0	0	0	0
O2	0	0	0	0	0
Cl2	0	0	0	0	0
HBr	0	0	0	0	0
Ar	0	0	0	0	0
He	0	100	100	400	0
SF6	0	150	150	0	0
CHF3	0	0	0	0	0
He cl	0	8	8	0	0
Compl.	Stabl	Stabl	Time	Time	End
Time	20s	60s	30s	10s
Channel
Delay
Norm
Trigger

Note: Etch rate was measured on dummy wafers.

Calculated etch rate= 1200 A/min

2.

Measure oxide thickness on each work wafer (N-well area)

14/08/01

vorosl

Nanospec, Nitride on 300 A oxide recipe

wafer	top	cent	flat	left	right	Average	S.D
#1	271	273	246	240	242	254.4	14.08
#2	260	267	245	253	241	253.2	8.24
#3	226	231	207	205	187	211.2	13.84
#4	233	236	215	198	205	217.4	13.68
#5	225	237	203	213	200	215.6	12.32
#6	222	225	197	210	200	210.8	10.16
#7	220	230	195	201	209	211	11.2
#8	210	213	187	190	192	198.4	10.48
#9	207	216	187	197	179	197.2	11.44
#10	203	215	189	192	185	196.8	9.76
#12	215	219	189	184	180	197.4	15.68
#13	199	210	178	200	188	195	9.6
#14	217	220	190	199	186	202.4	12.88
#15	230	240	214	206	197	217.4	14.08