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Run Card for cmos150 |
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Step 39.0 |
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Process: Metallization: target = 600 nm |
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1. |
Standard clean wafers and do a 30 sec.
25:1 H20:HF dip just before metallization.
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May 1, 2002 |
vorosl |
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2. |
Sputter Al/2%Si on #2, #4, #8, #10, (back side etched) |
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#3, #5 (without back side etch) wafers plus test dummies in CPA. |
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Process parameters: power=4.5 KW, Argon=6 mtorr, 2 passes, speed= first 20 cm/min, second= 25 cm/min. |
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