Run Card for cmos150

 

Step 37.0

 

 

 

 

 

Process:  Contact Plasma Etch in Lam2.

Date

Operator

 

 

 

 

 

Note: Had to wait for upgrading Lam2 Etcher to 6” capable.

April 24th, 2002

vorosl

1.

 Plasma etch contact holes in Lam2.

 

 

 

Recipe: SiO2etch; power: 850W; etch time: 73 sec; overetch: 20 sec.

 

 

 

 

4/17/02

Wafer #

patterned

Pressure (mTorr)

2.8

Power (W)

850

Gap (cm)

0.39

He (sccm)

120

CHF3 (sccm)

30

CHF4 (sccm)

90

Etch Time (sec)

30

 

Note: Jimmy’s experience, uniformity problem due to the electrode is worn out.

Top (5 cm)

4817

Center (0 cm)

4927

Flat (4 cm)

4943

Left (5 cm)

4879

Right (5 cm)

4904

Post-etch

 

Top (5 cm)

2426

Center (0 cm)

2955

Flat (4 cm)

2925

Left (5 cm)

2530

Right (5 cm)

2597

Oxide Etched

 

Top (5 cm)

2391

Center (0 cm)

1972

Flat (4 cm)

2018

Left (5 cm)

2349

Right (5 cm)

2307

Max

2391

Min

1972

Ave. (A/min)

4415

Non-Unif.

9.60%

 

 

 

 

 

 

 

Procedure:   #2,#4,#8,#10 wafers decided to finish. Lam2 did not performed uniformly due to the electrode. Different etch rate can be found between the 4" and 6" area!

Gap was adjusted to 0.39! The rest of the parameters are the same. Etch time: 1'13" overetch= 20%

               

 

 

2.

Remaining oxide thickness checked on opened area <100 A.

Contact holes structure also checked.